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SPECIFICATION
Device Name Type Name Spec. No.
: : :
IGBT MODULE
6MBI150U4B-120 MS5F 6013
Jan. 18 '05 Jan. 18 '05
S.Miyashita T.Miyasaka
Y.Seki
K.Yamada
MS5F6013
1
13
H04-004-07b
Revised
Date Classification Ind. Content
Records
Applied date Issued date Drawn Checked Checked Approved
Jan.-18 -'05
Enactment
T.Miyasaka K.Yamada
Y.Seki
MS5F6013
2 13
H04-004-06b
6MBI150U4B-120
1. Outline Drawing ( Unit : mm )
(
2. Equivalent circuit
shows theoretical dimension. ) shows reference dimension.
30,31,32
16,17,18
19
20
1 2 U 27,28,29 3 4 33,34,35
5 6
9 10 V 24,25,26 W 21,22,23
7 8
11 12 13,14,15
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3. Absolute Maximum Ratings ( at Tc= 25 C unless otherwise specified )
Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Icp -Ic -Ic pulse Pc Tj Tstg Continuous 1ms Tc=25 C o Tc=80 C o Tc=25 C o Tc=80 C
o
o
Conditions
1ms Collector Power Dissipation 1 device Junction temperature Storage temperature Isolation between terminal and copper base (*1) Viso AC : 1min. 2500 VAC voltage between thermistor and others (*2) Screw Mounting (*3) 3.5 Nm Torque (*1) All terminals should be connected together when isolation test will be done. (*2) Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) Recommendable Value : 2.5 to 3.5 Nm (M5)
o
Maximum Units Ratings 1200 V 20 V 200 150 400 A 300 150 300 735 W +150 o C -40 to +125
4. Electrical characteristics ( at Tj= 25 C unless otherwise specified )
Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr R lead R
o
Conditions VCE=1200V VGE=0V VCE=0V VGE=20V VCE=20V Ic=150mA Ic=150A VGE=15V
min. 4.5
o
Characteristics typ. max. 6.5 2.45 2.65 1.90 2.10 17 0.32 0.10 0.03 0.41 0.07 2.20 2.30 1.65 1.75 3.40 5000 495 3375 1.0 200 8.5 2.60 2.05 1.20 0.60 1.00 0.30 2.35 1.80 0.35 520 3450
Units mA nA V
Inverter
Input capacitance Turn-on time Turn-off time
Tj=25 C o Tj=125 C o Tj=25 C o Tj=125 C VCE=10V,VGE=0V,f=1MHz Vcc=600V Ic=150A VGE=15V RG=2.2 IF=150A VGE=0V Tj=25 C o Tj=125 C o Tj=25 C o Tj=125 C
o
Forward on voltage Reverse recovery time Lead resistance, terminal-chip (*4)
Thermistor
IF=150A
465 3305
V nF
us
V us m K
T=25 C o T=100 C o B value B T=25/50 C (*4) Biggest internal terminal resistance among arm. Resistance
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5. Thermal resistance characteristics
Items Thermal resistance(1device) Symbols Rth(j-c) IGBT FWD Conditions min. Characteristics typ. max. 0.17 0.28 Units
o
Contact Thermal resistance Rth(c-f) with Thermal Compound 0.05 (1 device) (*5) (*5) This is the value which is defined mounting on the additional cooling fin with thermal compound.
C/W
6. Indication on module Logo of production
6MBI150U4B-120
150A 1200V
Lot.No. 7. Applicable category
Place of manufacturing (code)
This specification is applied to IGBT-Module named 6MBI150U4B-120.
8. Storage and transportation notes
* The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . * Store modules in a place with few temperature changes in order to avoid condensation on the module surface. * Avoid exposure to corrosive gases and dust. * Avoid excessive external force on the module. * Store modules with unprocessed terminals. * Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time

90%
0V
L
0V VGE tr r Ir r
90%

VCE
V cc
Ic
90%
RG VGE
VCE Ic
0V 0A
tr ( i ) tr to n to f f

Ic
10%
10%
VCE tf
10%
10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box
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11. Reliability test results
Reliability Test Items
Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Pull force Test time Screw torque Test time Test methods and conditions : : : : 20N 101 sec. 2.5 ~ 3.5 Nm (M5) 101 sec. Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 5 (0:1) (0:1)
(Aug.-2001 edition)
Test Method 401 Method Test Method 402 method Test Method 403 Reference 1 Condition code B
3 Vibration
4 Shock
5 Solderabitlity
6 Resistance to Soldering Heat
1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor
Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Solder temp. : 2355 Immersion time : 50.5sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Solder temp. : 2605 Immersion time : 101sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : 1202 Test humidity : 855% Test duration : 96hr. Test temp. : Low temp. -405 High temp. 125 5 RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100
+0 -5
5
(0:1)
Mechanical Tests
Test Method 404 Condition code B
5
(0:1)
Test Method 303 Condition code A
5
(0:1)
Test Method 302 Condition code A
5
(0:1)
Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105
5 5 5
(0:1) (0:1) (0:1)
5
(0:1)
Environment Tests
5 Temperature Cycle
5
(0:1)
Dwell time Number of cycles 6 Thermal Shock Test temp.
Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles
+5 -0
Test Method 307 method Condition code A
5
(0:1)
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Reliability Test Items
Test categories Test items 1 High temperature Reverse Bias Test methods and conditions Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 (0:1)
(Aug.-2001 edition)
Test Method 101
Test temp. Bias Voltage Bias Method
Endurance Tests Tests Endurance
Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles
: Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr.
Test Method 101
5
(0:1)
: Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : : : : : : : : : 852 oC 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles
Test Method 102 Condition code C
5
(0:1)
4 Intermitted Operating Life (Power cycle) ( for IGBT )
Test Method 106
5
(0:1)
Failure Criteria
Item Characteristic Symbol Failure criteria Unit Lower limit Upper limit LSLx0.8 USLx2 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 mA A mA V V mV mV Note
Electrical Leakage current ICES characteristic IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Isolation voltage Viso Visual Visual inspection inspection Peeling Plating and the others
USLx1.2 Broken insulation The visual sample
LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement.
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Reliability Test Results
Test categorie s Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample
Test Method 401 Method Test Method 402 method Test Method 403 Condition code B Test Method 404 Condition code B Test Method 303 Condition code A Test Method 302 Condition code A Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 Test Method 307 method Condition code A
Test items
1 Terminal Strength (Pull test) 2 Mounting Strength
5 5 5 5 5 5 5 5 5 5 5 5
0 0 0 0 0 0 0 0 * 0 0 0
Mechanical Tests Environment Tests
3 Vibration 4 Shock 5 Solderabitlity 6 Resistance to Soldering Heat 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor 5 Temperature Cycle 6 Thermal Shock
1 High temperature Reverse Bias Test Method 101
5 5 5 5
* 0 * 0
Endurance Tests
2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycling) ( for IGBT )
Test Method 101 Test Method 102 Condition code C Test Method 106
* under confirmation
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Collector current vs. Collector-Emitter voltage (typ.) Tj=25oC / chip 400 400
Collector current vs. Collector-Emitter voltage (typ.) Tj=125oC / chip
Collector current : Ic [ A ]
300
Collector current : Ic [A ]
VGE=20V 15V
12V
300
VGE=20V 15V
12V
200 10V 100
200 10V 100 8V
8V 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 5 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 5
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
400 10
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25oC / chip
300
Collector-Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
Tj=25oC
Tj=125oC
8
6
200
4 Ic=300A Ic=150A Ic=75A
100
2
0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 5
0 5 10 15 20 Gate-Emitter voltage : VGE [ V ] 25
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25 C
100.0
o
Dynamic Gate charge (typ.) Vcc=600V, Ic=150A, Tj=25oC
Cies 10.0
Collector- Emitter voltage : VCE[ 200V/div ] Gate-Emitter voltage : VGE [ 5V/div ]
Capacitance : Cies, Coes, Cres [ nF ]
VGE
Cres 1.0 Coes
VCE 0 0 200 400 600 Gate charge : Qg [ nC ] 800
0.1 0 10 20 Collector-Emitter voltage : VCE [ V ] 30
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Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, RG=2.2, Tj=25oC 10000 10000
Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, RG=2.2, Tj=125oC
Switching time : ton, tr, toff, tf [ nsec ]
1000 toff ton 100
Switching time : ton, tr, toff, tf [ nsec ]
1000 ton toff tr 100 tf
tr tf
10 0 50 100 150 200 Collector current : Ic [ A ] 250
10 0 50 100 150 200 Collector current : Ic [ A ] 250
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=15V, Tj=25oC 10000 25
Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, RG=2.2
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
1000
ton toff tr
20
Eoff(125oC) Eon(125oC)
15
Err(125oC) Eoff(25oC) Eon(25oC) Err(25oC)
100 tf
10
5
10 1 10 100 Gate resistance : RG [ ] 1000
0 0 50 100 150 200 Collector current : Ic [ A ] 250 300
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=15V, Tj=125oC 50
Reverse bias safe operating area (max.) +VGE=15V, -VGE <= 15V, RG >= 2.2, Tj <= 125oC 400
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
40 Eon 30
Collector current : Ic [ A ]
1000
300
200
20
Eoff
10 Err 0 1 10 100 Gate resistance : RG [ ]
100
0 0 400 800 1200 Collector-Emitter voltage : VCE [ V ] 1600
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Forward current vs. Forward on voltage (typ.) chip 400 1000
Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, RG=2.2
Forward current : IF [ A ]
300
Tj=25oC
Tj=125oC
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
200
100
Irr(125oC) Irr(25oC) trr(125oC) trr(25oC)
100
0 0 1 2 3 Forward on voltage : VF [ V ] 4
10 0 50 100 150 200 250 Forward current : IF [ A ] 300
[ Thermistor ]
Transient thermal resistance (max.) 1.00 100.0 Temperature characteristic (typ.)
Thermal resistance : Rth(j-c) [ oC/W ]
FWD
Resistance : R [ k]
1.000
IGBT 0.10
10.0
1.0
0.01 0.001
0.1 0.010 0.100 Pulse width : Pw [ sec ]
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Temperature [ oC ]
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Warnings
- This product shall be used within its absolute maximum rating (voltage, current, and temperature).This product may be broken in case of using beyond the ratings. If Printed Circuit Board is not suitable, the main pin terminals may have higher temperature than Tstg. Also the pin terminals shall be used within Tstg. Tstg Tstg - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. (No.: MT5F12959)Tj Tc(Tc) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm100um10um - In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity.
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Warnings
- Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE-VGE : -VGE = -15V) - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCESVCE
Cautions
- Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems,please apply after confirmation of this product to be satisfied about system construction and required reliability.
If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.
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